PRODUCT DESCRIPTION
MITSUBISHI CM150TX-24T - IGBT Power Module
The MITSUBISHI CM150TX-24T is an Insulated Gate Bipolar Transistor (IGBT) power module engineered for high-power switching applications in industrial environments. This module integrates a 3-phase bridge configuration with a 1200V collector-emitter voltage and 150A collector current rating, facilitating efficient power conversion and control. It is designed for use in variable frequency drives, uninterruptible power supplies, and other demanding power electronics systems requiring robust semiconductor switching.
Technical Specifications:
- SERIES/FAMILY: CM Series (IGBT Power Modules)
- COMPONENT TYPE: Insulated Gate Bipolar Transistor (IGBT) Power Module
- ELECTRICAL SPECS:
- COLLECTOR-EMITTER VOLTAGE (Vces): 1200V
- COLLECTOR CURRENT (Ic): 150A
- GATE THRESHOLD VOLTAGE (Vge(th)): 5.0V to 9.0V (Typical)
- MAXIMUM JUNCTION TEMPERATURE (Tj): 150°C
- INTERNAL CONFIGURATION: 3-Phase Bridge (Six-Pack) with built-in freewheeling diodes
- MECHANICAL/PHYSICAL:
- PACKAGE TYPE: Standard Industrial Power Module Package
- TERMINALS: Screw terminals for power connections, smaller pins for gate drive
- ISOLATION: Isolated baseplate
- INTERFACE/CONTROL:
- GATE DRIVE: Requires external gate driver circuit
- ENVIRONMENTAL/MOUNTING:
- COOLING: Requires external heatsink for thermal management
- MOUNTING: Screw-down mounting to heatsink
- COMPATIBILITY/APPLICATION:
- TARGET SYSTEMS: AC motor drives, variable frequency drives (VFDs), uninterruptible power supplies (UPS), welding equipment, induction heating, power converters, industrial inverters