PRODUCT DESCRIPTION
SEMIKRON SKM100GB125N - Insulated Gate Bipolar Transistor (IGBT) Module
The SKM100GB125N is a high-power Insulated Gate Bipolar Transistor (IGBT) module designed for robust power conversion applications in industrial environments. This device functions as a critical switching component in power electronics, facilitating efficient energy transfer and control in systems such as motor drives, uninterruptible power supplies, and renewable energy inverters. It integrates multiple IGBTs and diodes within a single package, optimized for high voltage and current handling with precise gate control.
Technical Specifications:
- SERIES/FAMILY: SEMIKRON IGBT Module
- COMPONENT TYPE: Insulated Gate Bipolar Transistor (IGBT) Module
- ELECTRICAL SPECS:
- NOMINAL COLLECTOR CURRENT (IC,nom): 100A
- COLLECTOR-EMITTER VOLTAGE (VCES): 1200V
- CONFIGURATION: Half-bridge or single switch configuration, dependent on specific '5N' variant
- GATE THRESHOLD VOLTAGE (VGE(th)): Typically 5.5V to 6.5V
- MECHANICAL/PHYSICAL:
- FORM FACTOR: Standard industrial power module package with baseplate
- TERMINALS: Screw terminals for power connections, solder pins for gate and auxiliary control
- INTERFACE/CONTROL:
- GATE DRIVE REQUIREMENTS: Requires external isolated gate driver circuit
- FEEDBACK: Not integrated external current and voltage sensing required for closed-loop control
- ENVIRONMENTAL/MOUNTING:
- OPERATING JUNCTION TEMPERATURE (Tj): -40°C to +125°C
- STORAGE TEMPERATURE (Tstg): -40°C to +125°C
- COOLING METHOD: Requires external heatsink for thermal dissipation (forced air or liquid cooling dependent on application)
- MOUNTING STYLE: Chassis mount with screw fixation
- COMPATIBILITY/APPLICATION:
- TARGET SYSTEMS: AC motor drives, DC-DC converters, uninterruptible power supplies (UPS), welding inverters, renewable energy inverters, induction heating systems, power factor correction (PFC) circuits