DESCRIZIONE PRODOTTO
MITSUBISHI CM200EXS-34SA - Insulated Gate Bipolar Transistor (IGBT) Module
The MITSUBISHI CM200EXS-34SA is a high-power Insulated Gate Bipolar Transistor (IGBT) module from the MITSUBISHI CM series, designed for robust power switching applications in industrial environments. This device integrates multiple IGBTs and freewheeling diodes into a compact, isolated package, providing efficient current and voltage control. It is primarily utilized in motor drives, power conversion systems, and high-frequency switching circuits requiring precise power modulation and high reliability.
Technical Specifications:
- SERIES/FAMILY: MITSUBISHI CM Series
- COMPONENT TYPE: Insulated Gate Bipolar Transistor (IGBT) Module
- ELECTRICAL SPECS:
- NOMINAL COLLECTOR CURRENT (IC): 200A
- COLLECTOR-EMITTER VOLTAGE (VCES): 1200V
- GATE-EMITTER VOLTAGE (VGES): +/-20V (Absolute Maximum)
- CONFIGURATION: Typically a half-bridge or six-pack (three-phase bridge)
- MECHANICAL/PHYSICAL:
- FORM FACTOR: Compact power module
- TERMINALS: Screw terminals for power connections, smaller pins for gate drive
- MOUNTING: Baseplate for heatsink mounting
- INTERFACE/CONTROL:
- GATE DRIVE: Requires external isolated gate driver circuit
- ISOLATION: Electrically isolated baseplate
- ENVIRONMENTAL/MOUNTING:
- COOLING: Requires external heatsink for thermal management
- OPERATING JUNCTION TEMPERATURE: -40°C to +125°C (Typical range)
- IP RATING: Designed for integration into enclosed systems module itself does not carry an external IP rating
- COMPATIBILITY/APPLICATION:
- TARGET SYSTEMS: Variable Frequency Drives (VFDs), Uninterruptible Power Supplies (UPS), AC servo systems, welding equipment, induction heating, renewable energy inverters, traction systems