ОПИСАНИЕ ПРОДУКТА
MITSUBISHI CM200DX-24S - IGBT Power Module
This component is a high-power Insulated Gate Bipolar Transistor (IGBT) module designed for robust power conversion applications. It integrates multiple IGBTs and diodes in a compact package, facilitating efficient switching in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment. The module provides a critical building block for high-current, high-voltage power electronics systems requiring precise control and energy management.
Technical Specifications:
- SERIES/FAMILY: CM Series IGBT Module
- COMPONENT TYPE: Insulated Gate Bipolar Transistor (IGBT) Module
- ELECTRICAL SPECS:
- COLLECTOR CURRENT (Ic): 200A
- COLLECTOR-EMITTER VOLTAGE (Vces): 1200V
- CONFIGURATION: Three-phase bridge (6-pack)
- DIODE TYPE: Fast Recovery Diode (FRD)
- MECHANICAL/PHYSICAL:
- PACKAGE TYPE: Industry-standard module package
- TERMINALS: Screw terminals for power connections, smaller pins for gate drive and auxiliary signals
- INTERFACE/CONTROL:
- GATE DRIVE: Requires external gate driver circuit
- FEEDBACK: Not applicable (power switching component)
- ENVIRONMENTAL/MOUNTING:
- COOLING METHOD: Baseplate for heatsink mounting (forced air or liquid cooling typically required)
- MOUNTING STYLE: Screw-down baseplate mounting
- OPERATING TEMPERATURE: -40°C to +150°C (Junction Temperature)
- COMPATIBILITY/APPLICATION:
- TARGET SYSTEMS: AC motor drives, servo amplifiers, industrial inverters, uninterruptible power supplies (UPS), welding machines, induction heating systems, power factor correction (PFC) circuits.