ОПИСАНИЕ ПРОДУКТА
MITSUBISHI CM300DU-24F - IGBT Module
This MITSUBISHI CM300DU-24F is a high-power Insulated Gate Bipolar Transistor (IGBT) module engineered for robust industrial power conversion applications. It features a dual (half-bridge) configuration, providing efficient switching capabilities for motor drives, uninterruptible power supplies (UPS), and welding equipment. The module integrates advanced semiconductor technology to ensure reliable performance in demanding variable frequency drive (VFD) and power inverter systems.
Technical Specifications:
- SERIES/FAMILY: MITSUBISHI CM Series (Power Semiconductor Modules)
- COMPONENT TYPE: IGBT Module (Insulated Gate Bipolar Transistor Module)
- ELECTRICAL SPECS:
- COLLECTOR-EMITTER VOLTAGE (Vces): 1200V
- COLLECTOR CURRENT (Ic): 300A
- CONFIGURATION: Dual / Half-Bridge
- TECHNOLOGY: 6th Generation IGBT (Optimized for low loss and high efficiency)
- MECHANICAL/PHYSICAL:
- PACKAGE TYPE: Standard industrial power module package (brick-type)
- TERMINALS: Screw terminals for main power connections, smaller pins for gate drive and auxiliary
- INTERFACE/CONTROL:
- GATE DRIVE: Requires external isolated gate driver circuit
- FEEDBACK: Not applicable for discrete power module system controller handles feedback
- ENVIRONMENTAL/MOUNTING:
- COOLING METHOD: Baseplate for heat sink mounting (requires forced air or liquid cooling)
- MOUNTING STYLE: Screw-down mounting to a heat sink
- OPERATING TEMPERATURE: Standard industrial range (junction temperature up to 150°C)
- COMPATIBILITY/APPLICATION:
- TARGET SYSTEMS: Variable Frequency Drives (VFDs), Servo Amplifiers, Uninterruptible Power Supplies (UPS), Welding Inverters, Induction Heating, Renewable Energy Inverters (Solar, Wind)
- INDUSTRIAL SECTORS: Factory Automation, Robotics, Material Handling, Energy Management