PRODUCT DESCRIPTION
MITSUBISHI CM100RL-24NF - IGBT Module
This MITSUBISHI CM series Insulated Gate Bipolar Transistor (IGBT) module is engineered for high-voltage, high-current power switching applications in demanding industrial environments. It provides robust and efficient current control, making it suitable for critical power conversion stages in motor drives, uninterruptible power supplies, and renewable energy systems. The module integrates advanced semiconductor technology to ensure reliable performance and precise power management.
Technical Specifications:
- SERIES/FAMILY: CM Series
- COMPONENT TYPE: Insulated Gate Bipolar Transistor (IGBT) Module
- ELECTRICAL SPECS:
- COLLECTOR-EMITTER VOLTAGE (Vces): 2400V (2.4kV)
- NOMINAL COLLECTOR CURRENT (Ic): 100A
- GATE-EMITTER VOLTAGE (Vge): +/-20V (typical operating range)
- CONFIGURATION: Single IGBT
- POWER DISSIPATION: High power dissipation, requires external heatsink
- MECHANICAL/PHYSICAL:
- PACKAGE TYPE: Standard industrial module package
- TERMINATION: Screw terminals for power connections, smaller pins for gate drive
- MOUNTING: Baseplate for heatsink integration
- INTERFACE/CONTROL:
- GATE DRIVE REQUIREMENTS: Requires external gate driver circuit for proper switching
- ISOLATION: Electrically isolated baseplate
- ENVIRONMENTAL/MOUNTING:
- OPERATING JUNCTION TEMPERATURE RANGE: -40°C to +150°C
- STORAGE TEMPERATURE RANGE: -40°C to +125°C
- COOLING METHOD: Forced air or liquid cooling via external heatsink
- MOUNTING STYLE: Screw-down baseplate
- COMPATIBILITY/APPLICATION:
- TARGET SYSTEMS: Variable Frequency Drives (VFDs), Servo Amplifiers, Uninterruptible Power Supplies (UPS), Welding Equipment, Induction Heating Systems, Renewable Energy Inverters
- INDUSTRIAL SECTORS: Manufacturing, Energy Generation, Transportation, Heavy Industry, Power Electronics