PRODUCT DESCRIPTION
MITSUBISHI CM100RX-24S - IGBT Power Module
This MITSUBISHI CM100RX-24S is an Insulated Gate Bipolar Transistor (IGBT) power module engineered for high-power switching applications. It integrates a three-phase bridge configuration with freewheeling diodes, providing robust current handling and 1200V voltage blocking capabilities. This module is critical for efficient power conversion and precise control in industrial variable frequency drives, uninterruptible power supplies, and servo systems.
Technical Specifications:
- SERIES/FAMILY: CM Series Power Module
- COMPONENT TYPE: IGBT Power Module (Insulated Gate Bipolar Transistor)
- ELECTRICAL SPECS:
- NOMINAL COLLECTOR CURRENT (IC): 100A
- COLLECTOR-EMITTER VOLTAGE (VCES): 1200V
- CONFIGURATION: Three-Phase Bridge (6-pack) with integrated freewheeling diodes
- GATE THRESHOLD VOLTAGE (VGE(th)): 5.0V to 7.0V (typical)
- MAX JUNCTION TEMPERATURE (Tj): 150°C
- MECHANICAL/PHYSICAL:
- PACKAGE TYPE: Standard industrial module package
- TERMINALS: Screw terminals for main power, solder pins for gate/control
- MOUNTING: Baseplate for heatsink attachment
- INTERFACE/CONTROL:
- GATE DRIVE: Requires external gate driver circuit
- FEEDBACK: Not directly integrated external sensing required
- ENVIRONMENTAL/MOUNTING:
- IP RATING: Module is an open component IP rating determined by final enclosure.
- COOLING METHOD: Conduction cooling via insulated baseplate to external heatsink.
- OPERATING TEMPERATURE RANGE (Tj): -40°C to +150°C (Junction Temperature)
- COMPATIBILITY/APPLICATION: Variable Frequency Drives (VFDs), Servo Drives, Uninterruptible Power Supplies (UPS), Welding Equipment, Industrial Inverters, Renewable Energy Systems.