PRODUCT DESCRIPTION
MITSUBISHI CM75RL-12NF - Insulated Gate Bipolar Transistor (IGBT) Power Module
This component is a high-power Insulated Gate Bipolar Transistor (IGBT) module designed for robust industrial power conversion applications. It integrates a three-phase bridge configuration with freewheeling diodes, optimized for efficient switching in motor drives, uninterruptible power supplies (UPS), and welding equipment. The module provides precise current control and voltage handling capabilities essential for high-performance industrial automation systems.
Technical Specifications:
- SERIES/FAMILY: MITSUBISHI CM Series Power Modules
- COMPONENT TYPE: Insulated Gate Bipolar Transistor (IGBT) Module
- ELECTRICAL SPECS:
- COLLECTOR-EMITTER VOLTAGE (VCES): 1200V
- COLLECTOR CURRENT (IC): 75A (Continuous)
- CONFIGURATION: 3-Phase Bridge (6-pack)
- DIODE: Integrated Freewheeling Diodes (FWD)
- MECHANICAL/PHYSICAL:
- PACKAGE TYPE: Standard industrial module package
- TERMINALS: Screw terminals for power connections, smaller terminals for control signals
- INTERFACE/CONTROL:
- GATE DRIVE: Requires external gate driver circuitry for switching control
- ISOLATION: Electrically isolated baseplate for heatsink mounting
- ENVIRONMENTAL/MOUNTING:
- COOLING METHOD: Designed for heatsink mounting forced air or liquid cooling typically required
- MOUNTING STYLE: Screw-mount
- OPERATING JUNCTION TEMPERATURE: -40°C to +125°C
- COMPATIBILITY/APPLICATION:
- TARGET SYSTEMS: AC motor drives, servo amplifiers, uninterruptible power supplies (UPS), welding equipment, induction heating systems, power conditioners
- CONTROL TECHNOLOGY: Utilized in Pulse Width Modulation (PWM) based power conversion topologies