ОПИСАНИЕ ПРОДУКТА
MITSUBISHI CM900DUC-24S - IGBT Power Module
This component is a MITSUBISHI CM-series Insulated Gate Bipolar Transistor (IGBT) power module. It is engineered for high-power switching applications in industrial environments, serving as a critical component in motor drives, uninterruptible power supplies (UPS), welding equipment, and renewable energy inverters. The module integrates a dual IGBT configuration with freewheeling diodes, providing robust current handling and voltage blocking capabilities essential for efficient power conversion and control.
Technical Specifications:
- SERIES/FAMILY: CM-Series IGBT Module
- COMPONENT TYPE: Insulated Gate Bipolar Transistor (IGBT) Power Module
- ELECTRICAL SPECS:
- COLLECTOR-EMITTER VOLTAGE (Vces): 1200V
- COLLECTOR CURRENT (Ic): 900A
- CONFIGURATION: Dual (Half-Bridge)
- DIODE TYPE: Fast Recovery Diode (FRD)
- MECHANICAL/PHYSICAL:
- PACKAGE TYPE: Standard Industrial Power Module Package
- TERMINALS: Screw terminals for power connections, smaller pins for gate/control
- MOUNTING: Baseplate for heat sink attachment
- INTERFACE/CONTROL:
- GATE DRIVE: Requires external gate driver circuit
- FEEDBACK: Not applicable (discrete power device)
- ENVIRONMENTAL/MOUNTING:
- COOLING METHOD: Conduction cooling via baseplate to heat sink
- OPERATING TEMPERATURE: Standard industrial range (e.g., -40°C to +125°C junction temperature)
- MOUNTING STYLE: Screw-down to heat sink
- COMPATIBILITY/APPLICATION:
- TARGET SYSTEMS: AC motor drives, servo amplifiers, industrial inverters, UPS systems, welding power supplies, renewable energy converters
- FUNCTION: High-frequency power switching and rectification